The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Jun. 19, 2014
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Huai-Yu Cheng, White Plains, NY (US);
Hsiang-Lan Lung, Ardsley, NY (US);
Che-Min Lin, Kaohsiung, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/0004 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01); H01L 45/1625 (2013.01); G11C 2013/0083 (2013.01); G11C 2213/79 (2013.01);
Abstract
A family of phase change materials GeSbTeNhaving a crystallization temperature greater than 410° C., wherein a Ge atomic concentration is within a range from 43% to 54%, a Sb atomic concentration is within a range from 6% to 13%, a Te atomic concentration is within a range from 14% to 23%, and a N atomic concentration is within a range of 15% to 27%, is described. A method for programming a memory device including such phase change materials is also described.