The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Apr. 29, 2015
Headway Technologies, Inc., Milpitas, CA (US);
Hui-Chuan Wang, Pleasanton, CA (US);
Tong Zhao, Fremont, CA (US);
Min Li, Fremont, CA (US);
Kunliang Zhang, Fremont, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
A high performance TMR sensor is fabricated by employing a free layer comprised of CoNiFeB or CoNiFeBM where M is V, Ti, Zr, Nb, Hf, Ta, or Mo and the M content in the alloy is <10 atomic %. The free layer may have a FeCo/FeB/CoNiFeB, FeCo/CoFe/CoNiFeB, FeCo/CoFeB/CoNiFeB, or FeCo/CoNiFeB/CoFeB configuration. A CoNiFeBM layer may be formed by co-sputtering CoB with CoNiFeM. A 15 to 30% in improvement in TMR ratio over a conventional CoFe/NiFe free layer is achieved while maintaining low Hc and RA<3 ohm-um. The CoNiFeB or CoNiFeBM layer has a magnetostriction (λ) value between −5×10and 5×10.