The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Jun. 30, 2014
Panasonic Corporation, Osaka, JP;
Abstract
The present invention improves luminous efficiency of a nitride semiconductor light-emitting element. In the nitride semiconductor light-emitting element, a non-polar or semi-polar AlInGaN layer having a thickness of t1 is interposed between the AlInGaN layer included in the p-type nitride semiconductor layer and the active layer (0<x2≦1, 0≦y2<1, 0<z2<1, x2+y2+z2=1). The AlInGaN layer has first and second interfaces located close to or in contact with the active layer and the AlInGaN layer, respectively. The AlInGaN layer has a hydrogen concentration distribution along its thickness direction in the inside thereof in such a manner that the hydrogen concentration is increased from the first interface to a thickness t2 (t2<t1), reaches a peak at the thickness t2, and is decreased from the thickness t2 to the second interface. Magnesium contained in the AlInGaN layer is prevented from being diffused into the active layer to improve the luminous efficiency.