The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Oct. 08, 2012
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/18 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1804 (2013.01); H01L 29/6659 (2013.01); H01L 29/7833 (2013.01); Y02E 10/547 (2013.01);
Abstract
The present invention provides a method of forming a doping region. A substrate is provided, and a poly-silicon layer is formed on the substrate. A silicon oxide layer is formed on the poly-silicon layer. An implant process is performed to form a doping region in the poly-silicon layer. The present invention further provides a method for forming a MOS.