The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Nov. 15, 2012
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H01L 21/335 (2006.01); H01L 29/66 (2006.01); H01L 29/73 (2006.01); H01L 29/739 (2006.01); H01L 29/74 (2006.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66363 (2013.01); H01L 27/0255 (2013.01); H01L 27/0262 (2013.01); H01L 27/0886 (2013.01); H01L 29/73 (2013.01); H01L 29/7391 (2013.01); H01L 29/7436 (2013.01);
Abstract
A device includes a semiconductor substrate, and an insulation region extending from a top surface of the semiconductor substrate into the semiconductor substrate. The device further includes a first node and a second node, and an Electro-Static Discharge (ESD) device coupled between the first node and the second node. The ESD device includes a semiconductor fin adjacent to and over a top surface of the insulation region. The ESD device is configured to, in response to an ESD transient on the first node, conduct a current from the first node to the second node.