The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
May. 12, 2014
Macronix International Co., Ltd., Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
Provided is a memory cell including a substrate, two doped regions of a first conductivity type, one doped region of a second conductivity type, two stacked structures, and a first isolation structure. The doped regions of the first conductivity type are respectively disposed in the substrate. The doped region of the second conductivity type is disposed in the substrate between the two doped regions of the first conductivity type. The stacked structures are disposed on the substrate and respectively cover the corresponding doped regions of the first conductivity type and a portion of the doped region of the second conductivity type. Each of the stacked structures includes one charge storage layer. The first isolation structure completely covers and is in contact with the bottom surface of each of the doped regions of the first conductivity type and the bottom surface of the doped region of the second conductivity type.