The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2015

Filed:

May. 29, 2013
Applicant:

Intermolecular, Inc., San Jose, CA (US);

Inventor:

Mankoo Lee, Fremont, CA (US);

Assignee:

Intermolecular, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); C23C 16/04 (2013.01); C23C 16/45544 (2013.01); H01L 21/76873 (2013.01); H01L 21/76883 (2013.01); H01L 23/53233 (2013.01); H01L 23/53295 (2013.01); H01L 21/76843 (2013.01); H01L 21/76849 (2013.01); H01L 2221/1089 (2013.01);
Abstract

Methods to increase metal interconnect reliability are provided. Methods include forming a conformal barrier layer within an opening in a semiconductor device structure and forming a copper alloy material above the conformal barrier layer. Next, removing the copper alloy material that extends beyond the opening. Removing native oxide from a top surface of the copper alloy material. Further, annealing or applying a plasma treatment to the copper alloy material. Finally, forming a capping layer above the copper alloy material. Notably, near the top of the copper alloy material, smaller copper grain growth may be present. Furthermore, more non-copper alloy atoms are present near the top of the copper alloy material than the bulk of the copper alloy material.


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