The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Mar. 14, 2013
Kabushiki Kaisha Toshiba, Tokyo, JP;
Susumu Obata, Kanagawa-ken, JP;
Toshiya Nakayama, Kanagawa-ken, JP;
Hisashi Ito, Kanagawa-ken, JP;
Akiya Kimura, Kanagawa-ken, JP;
Kazuo Shimokawa, Kanagawa-ken, JP;
Kazuhito Higuchi, Kanagawa-ken, JP;
Akihiro Kojima, Kanagawa-ken, JP;
Miyoko Shimada, Kanagawa-ken, JP;
Yoshiaki Sugizaki, Kanagawa-ken, JP;
Hideto Furuyama, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, tokyo, JP;
Abstract
A semiconductor light emitting device includes a light emitting unit, a first and second electrode, a first and second metal pillar, a sealing unit, a rectifying element, and a first and second interconnection. The light emitting unit includes a first and second semiconductor layer, and a light-emitting layer. The light-emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light-emitting layer. The first electrode is provided on the first semiconductor layer. The second electrode is provided on the second semiconductor layer. The first metal pillar is electrically connected to the first electrode. The second metal pillar is electrically connected to the second electrode. The sealing unit seals the first metal pillar and the second metal pillar. The rectifying element is provided below the first semiconductor layer, including a rectifying unit.