The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2015

Filed:

Feb. 11, 2014
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventor:

Wei-Shan Liao, Yunlin County, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/00 (2006.01); H01L 29/872 (2006.01); H01L 29/45 (2006.01); H01L 29/06 (2006.01); H01L 21/324 (2006.01); H01L 21/283 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/283 (2013.01); H01L 21/324 (2013.01); H01L 29/06 (2013.01); H01L 29/0619 (2013.01); H01L 29/45 (2013.01); H01L 29/66143 (2013.01);
Abstract

A Schottky diode is disclosed. The Schottky diode includes: a substrate, a first-type buried layer in the substrate, a cathode region, an anode region surrounding the cathode region, and a first-type guard ring surrounding the anode region and connected to the first-type buried layer. The cathode region preferably includes a high-voltage second-type lightly doped drain in the substrate, a first-type well surrounding the high-voltage second-type lightly doped drain, and a first-type doping region in the first-type well and surrounding the high-voltage second-type lightly doped drain.


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