The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Jul. 21, 2014
Applicant:
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Inventors:
Akito Nishii, Tokyo, JP;
Katsumi Nakamura, Tokyo, JP;
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Chiyoda-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/329 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/861 (2013.01); H01L 29/0615 (2013.01); H01L 29/0696 (2013.01); H01L 29/083 (2013.01); H01L 29/423 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01);
Abstract
A semiconductor device includes: an N-type drift layer; a P-type anode layer on the N-type drift layer; a trench penetrating the P-type anode layer; a conductive substance embedded in the trench via an insulating film; and an N-type buffer layer between the N-type drift layer and the P-type anode layer and having impurity concentration which is higher than that of the N-type drift layer.