The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Sep. 09, 2014
Joled Inc., Tokyo, JP;
Hiroshi Hayashi, Hyogo, JP;
Tomoaki Izumi, Hyogo, JP;
Mami Nonoguchi, Hyogo, JP;
Toshiaki Yoshitani, Hyogo, JP;
JOLED INC., Tokyo, JP;
Abstract
A thin film semiconductor device comprises a substrate, a gate electrode disposed above the substrate, an oxide semiconductor layer disposed above the substrate so as to oppose the gate electrode, a channel protective layer disposed on the oxide semiconductor layer, and a source electrode and a drain electrode each connected to the oxide semiconductor layer. The density of states DOS [eVcm] of oxygen defects in the oxide semiconductor layer satisfies the following relationship:DOS≦1.710×10×()−6.468×10×()+6.113×10provided that 2.0 eV≦Ec−E≦2.7 eVwhere Ec [eV] is an energy level of a conduction band edge of the oxide semiconductor layer and E [eV] is a predetermined energy level of the oxide semiconductor layer.