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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9202868 B1

PDFFull Text
Date of Patent:
Dec. 01, 2015

Filed:

Jul. 28, 2014

Process for fabricating nanowire arrays

Applicant:

Advanced Silicon Group, Inc., Lincoln, MA (US);

Inventors:

Brent Buchine, Watertown, MA (US);

Marcie R. Black, Salem, NH (US);

Faris Modawar, Orem, UT (US);

Assignee:

Advanced Silicon Group, Inc., Lincoln, MA (US);

Attorney:

Lando & Anastasi, LLP

Primary Examiner:

Selim Ahmed

Int. Cl.
CPC ...
H01L 29/06 (2006.01); B01J 20/10 (2006.01); B01J 20/28 (2006.01); B82Y 20/00 (2011.01); B82Y 30/00 (2011.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 31/0236 (2006.01); H01M 4/38 (2006.01); H01L 29/16 (2006.01); H01M 4/134 (2010.01); H01M 4/1395 (2010.01); H01M 4/36 (2006.01); H01M 4/66 (2006.01); H01M 10/0525 (2010.01);
U.S. Cl.
CPC ...
H01L 29/0676 (2013.01); B01J 20/10 (2013.01); B01J 20/28007 (2013.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); H01L 21/3086 (2013.01); H01L 21/30604 (2013.01); H01L 29/16 (2013.01); H01L 31/0236 (2013.01); H01M 4/386 (2013.01); H01M 4/134 (2013.01); H01M 4/1395 (2013.01); H01M 4/366 (2013.01); H01M 4/661 (2013.01); H01M 10/0525 (2013.01); Y02E 10/50 (2013.01); Y10S 977/762 (2013.01);
Abstract

A process is provided for etching a silicon-containing substrate to form nanowire arrays. In this process, one deposits nanoparticles and a metal film onto the substrate in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. One submerges the metallized substrate into an etchant aqueous solution comprising HF and an oxidizing agent. In this way arrays of nanowires with controlled diameter and length are produced.

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