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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9202767 B1

PDFFull Text
Date of Patent:
Dec. 01, 2015

Filed:

Mar. 16, 2012

Semiconductor device and method of manufacturing the same

Applicants:

Ji Hwang Kim, Bucheon-si, KR;

Kwang-chul Choi, Suwon-si, KR;

Sangwon Kim, Seoul, KR;

Tae Hong Min, Gumi-si, KR;

Inventors:

Ji Hwang Kim, Bucheon-si, KR;

Kwang-Chul Choi, Suwon-si, KR;

Sangwon Kim, Seoul, KR;

Tae Hong Min, Gumi-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:

F. Chau & Associates, LLP

Primary Examiner:

Colleen Matthews

Assistant Examiner:

William Harriston

Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/36 (2006.01); H01L 25/065 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/14 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/525 (2006.01); H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
H01L 23/36 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 25/0657 (2013.01); H01L 21/563 (2013.01); H01L 23/147 (2013.01); H01L 23/3114 (2013.01); H01L 23/3135 (2013.01); H01L 23/3192 (2013.01); H01L 23/48 (2013.01); H01L 23/49816 (2013.01); H01L 23/525 (2013.01); H01L 23/552 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/80 (2013.01); H01L 24/81 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0519 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05556 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13021 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/18161 (2013.01);
Abstract

Provided are a semiconductor device including a through via plug and a method of manufacturing the same. In the semiconductor device, since a redistributed interconnection pattern is disposed on a protection film of a convex-concave structure having a protrusion and a recessed portion, the semiconductor device may have improved reliability while preventing a leakage current. In the method of manufacturing the semiconductor device, since an end surface of through via structure is exposed by removing a protection film and an insulating film liner using a selective etching process, damage to the through via structure is minimized, thereby preventing copper contamination in a substrate.

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