The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Jan. 18, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Yu-Lien Huang, Jhubei, TW;
Chi-Wen Liu, Hsinchu, TW;
Zhao-Cheng Chen, New Taipei, TW;
Ming-Huan Tsai, Zhubei, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02697 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/78 (2013.01); H01L 29/517 (2013.01); H01L 29/7833 (2013.01);
Abstract
In one embodiment, a method includes providing a semiconductor substrate having a trench disposed thereon and forming a plurality of layers in the trench. The plurality of layers formed in the trench is etched thereby providing at least one etched layer having a top surface that lies below a top surface of the trench. In a further embodiment, this may provide for a substantially v-shaped opening or entry to the trench for the formation of further layers.