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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9202686 B1

PDFFull Text
Date of Patent:
Dec. 01, 2015

Filed:

Nov. 08, 2013

Electronic devices including barium strontium titanium oxide films

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Kie Y. Ahn, Chappaqua, NY (US);

Leonard Forbes, Corvallis, OR (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Schwegman Lundberg & Woessner, P.A.

Primary Examiner:

Benjamin Sandvik

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01); H01G 4/12 (2006.01); H01L 21/28 (2006.01); H01L 21/314 (2006.01); H01L 21/316 (2006.01); H01L 49/02 (2006.01); H01L 29/51 (2006.01); H01G 4/33 (2006.01); H01L 27/11 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02565 (2013.01); C23C 16/409 (2013.01); H01G 4/1227 (2013.01); H01L 21/02592 (2013.01); H01L 21/02675 (2013.01); H01L 21/28194 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 21/28291 (2013.01); H01L 21/3141 (2013.01); H01L 21/31691 (2013.01); H01L 28/55 (2013.01); H01L 29/516 (2013.01); H01G 4/33 (2013.01); H01L 27/11 (2013.01); H01L 29/78 (2013.01);
Abstract

Apparatus and methods of forming the apparatus include a dielectric layer containing barium strontium titanium oxide layer, an erbium-doped barium strontium titanium oxide layer, or a combination thereof. Embodiments of methods of fabricating such dielectric layers provide dielectric layers for use in a variety of devices. Embodiments include forming barium strontium titanium oxide film using atomic layer deposition. Embodiments include forming erbium-doped barium strontium titanium oxide film using atomic layer deposition.

Find Patent Forward Citations

Ahn, Kie. (2015). Electronic devices including barium strontium titanium oxide films (U.S. Patent No. 9202686). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9202686

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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