The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Nov. 08, 2013
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Kie Y. Ahn, Chappaqua, NY (US);
Leonard Forbes, Corvallis, OR (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01); H01G 4/12 (2006.01); H01L 21/28 (2006.01); H01L 21/314 (2006.01); H01L 21/316 (2006.01); H01L 49/02 (2006.01); H01L 29/51 (2006.01); H01G 4/33 (2006.01); H01L 27/11 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02565 (2013.01); C23C 16/409 (2013.01); H01G 4/1227 (2013.01); H01L 21/02592 (2013.01); H01L 21/02675 (2013.01); H01L 21/28194 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 21/28291 (2013.01); H01L 21/3141 (2013.01); H01L 21/31691 (2013.01); H01L 28/55 (2013.01); H01L 29/516 (2013.01); H01G 4/33 (2013.01); H01L 27/11 (2013.01); H01L 29/78 (2013.01);
Abstract
Apparatus and methods of forming the apparatus include a dielectric layer containing barium strontium titanium oxide layer, an erbium-doped barium strontium titanium oxide layer, or a combination thereof. Embodiments of methods of fabricating such dielectric layers provide dielectric layers for use in a variety of devices. Embodiments include forming barium strontium titanium oxide film using atomic layer deposition. Embodiments include forming erbium-doped barium strontium titanium oxide film using atomic layer deposition.