The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Mar. 14, 2013
Sandisk Technologies Inc., Plano, TX (US);
Chia-Lin Hsiung, Fremont, CA (US);
Mohan Dunga, Santa Clara, CA (US);
Man L Mui, Santa Clara, CA (US);
Masaaki Higashitani, Cupertino, CA (US);
SanDisk Technologies Inc., Plano, TX (US);
Abstract
Techniques for sensing the threshold voltage of a memory cell during reading and verify operations by compensating for changes, including temperature-based changes, in the resistance of a bit line or other control line. A memory cell being sensed is in a block in a memory array and the block is in a group of blocks. A portion of the bit line extends between the group of blocks and a sense component and has a resistance which is based on the length/distance and the temperature. Various parameters can be varied with temperature and the group of blocks to provide the compensation, including bit line voltage, selected word line voltage, source line voltage, sense time and/or sense current or voltage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile