The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Oct. 19, 2009
Suguru Matsumoto, Nishishirakawa, JP;
Susumu Sonokawa, Nishishirakawa, JP;
Toshiharu Uesugi, Nishishirakawa, JP;
Takashi Mori, Echizen, JP;
Suguru Matsumoto, Nishishirakawa, JP;
Susumu Sonokawa, Nishishirakawa, JP;
Toshiharu Uesugi, Nishishirakawa, JP;
Takashi Mori, Echizen, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
The present invention provides a silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single crystal while applying a horizontal magnetic field to a silicon raw material melt accommodated in a quartz crucible by a magnetic field application device, comprising: measuring a center position of the magnetic field generated by the magnetic field application device; and deviating the measured center position of the magnetic field from a pulling member serving as a rotation axis of the single crystal in a horizontal direction within the range of 2 to 14 mm before manufacture of the single crystal and/or during manufacture of the single crystal. As a result, the silicon single crystal manufacturing method and manufacturing apparatus that enable manufacture of a single crystal while suppressing fluctuations in diameter and in oxygen concentration without a variation caused due to characteristics of the apparatus can be provided.