The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Mar. 05, 2013
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Toshiba Materials Co., Ltd., Yokohama-shi, Kanagawa, JP;
Akito Sasaki, Yokohama, JP;
Miho Nakamura, Ayase, JP;
Tomomichi Naka, Tokyo, JP;
Yoko Tokuno, Tokyo, JP;
Hideyuki Oozu, Yokohama, JP;
Kabushiki Kaisha Toshiba, Minato-Ku, JP;
Toshiba Materials Co., Ltd., Yokohama-Shi, JP;
Abstract
According to one embodiment, a substrate includes a semiconductor layer. The semiconductor layer comprises tungsten oxide particles having a first peak in a range of 268 to 274 cm, a second peak in a range of 630 to 720 cm, and a third peak in a range of 800 to 810 cmin Raman spectroscopic analysis. The semiconductor layer has a thickness of 1 μm or more. The semiconductor layer has a porosity of 20 to 80 vol %.