The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Jun. 25, 2014
Applicants:
Jie Su, Santa Clara, CA (US);
Tuoh-bin NG, San Jose, CA (US);
Olga Kryliouk, Sunnyvale, CA (US);
Sang Won Kang, San Jose, CA (US);
Jie Cui, Albany, CA (US);
Inventors:
Jie Su, Santa Clara, CA (US);
Tuoh-Bin Ng, San Jose, CA (US);
Olga Kryliouk, Sunnyvale, CA (US);
Sang Won Kang, San Jose, CA (US);
Jie Cui, Albany, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/22 (2006.01); H01L 33/32 (2010.01); H01L 33/22 (2010.01); H01L 33/16 (2010.01); H01L 33/30 (2010.01); C30B 23/02 (2006.01); C30B 25/04 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); C23C 16/06 (2006.01); H01L 33/20 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); C23C 16/06 (2013.01); C30B 23/025 (2013.01); C30B 25/04 (2013.01); C30B 25/186 (2013.01); C30B 29/406 (2013.01); H01L 21/0237 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 33/0066 (2013.01); H01L 33/16 (2013.01); H01L 33/20 (2013.01); H01L 33/22 (2013.01); H01L 33/30 (2013.01); H01L 33/007 (2013.01);
Abstract
Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.