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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9196699 B1

PDFFull Text
Date of Patent:
Nov. 24, 2015

Filed:

Jul. 11, 2014

Semiconductor device and method for fabricating the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chia-Fu Hsu, Tainan, TW;

Chun-Mao Chiou, Chiayi County, TW;

Shih-Chieh Hsu, New Taipei, TW;

Jian-Cun Ke, Tainan, TW;

Chun-Lung Chen, Tainan, TW;

Lung-En Kuo, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Kevin M Picardat

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/513 (2013.01); H01L 21/28088 (2013.01); H01L 29/6656 (2013.01);
Abstract

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate; depositing a liner on the gate structure and the substrate; and performing an etching process by injecting a gas comprising CHF, O, and He for forming a spacer adjacent to the gate structure.

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Hsu, Chia-Fu. (2015). Semiconductor device and method for fabricating the same (U.S. Patent No. 9196699). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9196699

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