The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Jan. 31, 2014
Infineon Technologies Ag, Neubiberg, DE;
Wolfgang Lehnert, Lintach, DE;
Michael Stadtmueller, Villach, AT;
Stefan Pompl, Landshut, DE;
Markus Meyer, Sinzing, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method for manufacturing a semiconductor device and a semiconductor device are disclosed. The method comprises forming a trench in a substrate, partially filling the trench with a first semiconductive material, forming an interface along a surface of the first semiconductive material, and filling the trench with a second semiconductive material. The semiconductor device includes a first electrode arranged along sidewalls of a trench and a dielectric arranged over the first electrode. The semiconductor device further includes a second electrode at least partially filling the trench, wherein the second electrode comprises an interface within the second electrode.