The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Jan. 06, 2014
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Gurpreet Lugani, Boise, ID (US);
Kevin J. Torek, Meridian, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 49/02 (2006.01); H01L 27/108 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); H01L 27/10852 (2013.01); H01L 27/10894 (2013.01); H01L 28/91 (2013.01); H01L 21/31116 (2013.01);
Abstract
A method of forming capacitors includes providing first capacitor electrodes within support material. The first capacitor electrodes contain TiN and the support material contains polysilicon. The polysilicon-containing support material is dry isotropically etched selectively relative to the TiN-containing first capacitor electrodes using a sulfur and fluorine-containing etching chemistry. A capacitor dielectric is formed over sidewalls of the first capacitor electrodes and a second capacitor electrode is formed over the capacitor dielectric. Additional methods are disclosed.