The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Feb. 27, 2014
Applicant:

Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;

Inventors:

Kuo-Hua Chen, Kaohsiung, TW;

Tzu-Hua Lin, Kaohsiung, TW;

Kuan-Neng Chen, Kaohsiung, TW;

Yan-Pin Huang, Kaohsiung, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); H01L 21/563 (2013.01); H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13118 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13149 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13157 (2013.01); H01L 2224/13164 (2013.01); H01L 2224/13166 (2013.01); H01L 2224/13169 (2013.01); H01L 2224/13176 (2013.01); H01L 2224/13178 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/16501 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/75251 (2013.01); H01L 2224/75252 (2013.01); H01L 2224/8183 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81203 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06568 (2013.01); H01L 2924/15788 (2013.01);
Abstract

The disclosure relates to a semiconductor bonding structure and process and a semiconductor chip. The semiconductor bonding structure includes a first pillar, a first interface, an intermediate area, a second interface and a second pillar in sequence. The first pillar, the second pillar and the intermediate area include a first metal. The first interface and the second interface include the first metal and an oxide of a second metal. The content percentage of the first metal in the first interface and the second interface is less than that of the first metal in the intermediate area.


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