The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
May. 19, 2010
Applicants:
Innocenzo Tortorelli, Moncalieri, IT;
Fabio Pellizzer, Cornate d'Adda, IT;
Pietro Petruzza, Pessano con Bornago, IT;
Inventors:
Innocenzo Tortorelli, Moncalieri, IT;
Fabio Pellizzer, Cornate d'Adda, IT;
Pietro Petruzza, Pessano con Bornago, IT;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01);
Abstract
Resistive random access memory elements, such as phase change memory elements, may be defined using a plurality of parallel conductive lines over a stack of layers, at least one of which includes a resistive switching material. The stack may be etched using the conductive lines as a mask. As a result, memory elements may be self-aligned to the conductive lines.