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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9196508 B1

PDFFull Text
Date of Patent:
Nov. 24, 2015

Filed:

Oct. 19, 2012

Method for producing three-dimensional integrated circuit structure

Applicants:

Yang-kuo Kuo, Taoyuan County, TW;

Chia-yi Hsiang, Taoyuan County, TW;

Hung-tai Ku, Taoyuan County, TW;

Inventors:

Yang-Kuo Kuo, Taoyuan County, TW;

Chia-Yi Hsiang, Taoyuan County, TW;

Hung-Tai Ku, Taoyuan County, TW;

Assignee:

NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY, Taoyuan, TW;

Attorney:

Chun-Ming Shih

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Lawrence-Linh T Nguyen

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/60 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 23/15 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 21/56 (2013.01); H01L 23/15 (2013.01); H01L 23/3121 (2013.01); H01L 23/5384 (2013.01); H01L 23/564 (2013.01); H01L 23/49816 (2013.01); H01L 25/0655 (2013.01); H01L 2224/16225 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/15311 (2013.01);
Abstract

A three-dimensional integrateds circuit structure includes a first metal circuit substrate, an interposer substrate disposed on the first metal circuit substrate and electrically connected therewith, and at least one semiconductor component disposed on the interposer substrate. The interposer substrate is used to dissipate the heat generated by the operation of the semiconductor components, so as to achieve the objective of increasing the lifespan of the semiconductor components.

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