The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Sep. 29, 2014
Applicant:

Ngk Insulators, Ltd., Aichi, JP;

Inventors:

Yoshitaka Kuraoka, Okazaki, JP;

Tomohiko Sugiyama, Nagoya, JP;

Sota Maehara, Nagoya, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); C30B 25/186 (2013.01); C30B 29/403 (2013.01); H01L 21/02024 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02658 (2013.01); H01L 21/30625 (2013.01); H01L 21/324 (2013.01);
Abstract

Provided is a method for treating a group III nitride substrate capable of obtaining, in the case where a group III nitride layer is laminated thereon, a group III nitride substrate that can form an electronic device having excellent characteristics. The method for treating a group III nitride substrate includes the steps of CMPing a surface of a substrate, elevating a temperature of the group III nitride substrate after the CMP process to a predetermined annealing temperature under a nitrogen gas atmosphere, and holding the group III nitride substrate whose temperature has been elevated to the annealing temperature for four minutes or more and eight minutes or less in a first mixed atmosphere of a hydrogen gas and a nitrogen gas or a second mixed atmosphere of a hydrogen gas and an ammonia gas.


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