The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Jul. 16, 2014
Applicant:
Hitachi High-technologies Corporation, Tokyo, JP;
Inventors:
Yoshimi Kawanami, Hitachinaka, JP;
Tohru Ishitani, Sayama, JP;
Assignee:
Hitachi High-Technologies Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/08 (2006.01); H01J 27/26 (2006.01); H01J 37/305 (2006.01);
U.S. Cl.
CPC ...
H01J 37/08 (2013.01); H01J 27/26 (2013.01); H01J 37/3056 (2013.01); H01J 2237/002 (2013.01); H01J 2237/006 (2013.01); H01J 2237/0807 (2013.01);
Abstract
Provided is a gas field ionization ion source capable of emitting heavy ions with high brightness which are suitable for processing a sample. The gas field ionization ion source according to the present invention includes a temperature controller individually controlling the temperature of the tip end of an emitter electrode () and the temperature of a gas injection port part () of a gas supply unit.