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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9196356 B1

PDFFull Text
Date of Patent:
Nov. 24, 2015

Filed:

Mar. 14, 2013

Stackable non-volatile memory

Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Yang Hong, Singapore, SG;

Yong Wee Francis Poh, Singapore, SG;

Tze Ho Simon Chan, Singapore, SG;

Assignee:

GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;

Attorney:

Horizon IP Pte. Ltd.

Primary Examiner:

Gene Auduong

Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01); G11C 8/16 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0004 (2013.01); G11C 8/16 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); G11C 11/5607 (2013.01); G11C 11/5678 (2013.01); G11C 11/5685 (2013.01); G11C 13/0002 (2013.01); G11C 13/003 (2013.01); G11C 13/0007 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01); H01L 27/2481 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/08 (2013.01); H01L 45/126 (2013.01); H01L 45/1226 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/1675 (2013.01); G11C 2213/71 (2013.01); G11C 2213/78 (2013.01); G11C 2213/79 (2013.01);
Abstract

A multi-bit NVM cell includes a storage unit having resistive elements, such as phase change resistive elements. The NVM cell may be configured as a single port or dual port multi-bit cell. The NVM cell includes a cell selector. The cell selector selects the multi-bit cell. When appropriate signals are applied to the NVM cell, the cell selector selects an appropriate resistive element of the storage unit. A plurality of storage units can be commonly coupled to the cell selector, facilitating high density applications.

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Hong, Yang. (2015). Stackable non-volatile memory (U.S. Patent No. 9196356). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9196356

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