The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Mar. 07, 2013
Applicants:

Mrinal Kochar, San Jose, CA (US);

Piyush Sagdeo, San Jose, CA (US);

Anubhav Khandelwal, Campbell, CA (US);

Inventors:

Mrinal Kochar, San Jose, CA (US);

Piyush Sagdeo, San Jose, CA (US);

Anubhav Khandelwal, Campbell, CA (US);

Assignee:

SanDisk Technologies Inc., Plano, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 12/02 (2006.01); G11C 11/56 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0246 (2013.01); G11C 11/5642 (2013.01); G11C 16/26 (2013.01); G11C 16/349 (2013.01); G11C 16/3422 (2013.01);
Abstract

A dynamic read case designation is determined for each of multiple wordline regions, respectively, of each of a number of single-level cell logic groups within a computer memory. The dynamic read case designation for any given one of the multiple wordline regions specifies a wordline read voltage to be used in reading memory cells of each wordline within the given one of the multiple wordline regions. The number of single-level cell logic groups are folded into a multi-level cell block. The folding includes reading the memory cells of each wordline of each of the multiple wordline regions of each of the number of single-level cell logic groups using a wordline read voltage corresponding to the dynamic read case designation, as determined for the wordline region within which the read memory cells reside.


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