The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Jan. 07, 2010
Yutaka Mikawa, Ushiku, JP;
Makiko Kiyomi, Ushiku, JP;
Yuji Kagamitani, Sendai, JP;
Toru Ishiguro, Sendai, JP;
Yutaka Mikawa, Ushiku, JP;
Makiko Kiyomi, Ushiku, JP;
Yuji Kagamitani, Sendai, JP;
Toru Ishiguro, Sendai, JP;
Mitsubishi Chemical Corporation, Tokyo, JP;
Tohoku University, Sendai-shi, JP;
Abstract
To grow a highly pure nitride crystal having a low oxygen concentration efficiently by an ammonothermal method. A process for producing a nitride crystal, which comprises bringing a reactant gas reactive with ammonia to form a mineralizer, and ammonia into contact with each other to prepare a mineralizer in a reactor or in a closed circuit connected to a reactor; and growing a nitride crystal by an ammonothermal method in the presence of the ammonia and the mineralizer.