The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Feb. 15, 2010
Kazuhisa Yamamura, Hamamatsu, JP;
Akira Sakamoto, Hamamatsu, JP;
Terumasa Nagano, Hamamatsu, JP;
Yoshitaka Ishikawa, Hamamatsu, JP;
Satoshi Kawai, Hamamatsu, JP;
Kazuhisa Yamamura, Hamamatsu, JP;
Akira Sakamoto, Hamamatsu, JP;
Terumasa Nagano, Hamamatsu, JP;
Yoshitaka Ishikawa, Hamamatsu, JP;
Satoshi Kawai, Hamamatsu, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
A ptype semiconductor substratehas a first principal surfaceand a second principal surfaceopposed to each other and includes a photosensitive region. The photosensitive regionis composed of an ntype impurity region, a ptype impurity region, and a region to be depleted with application of a bias voltage in the ptype semiconductor substrate. An irregular asperityis formed in the second principal surfaceof the ptype semiconductor substrate. An accumulation layeris formed on the second principal surfaceside of the ptype semiconductor substrateand a region in the accumulation layeropposed to the photosensitive regionis optically exposed.