The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Jun. 05, 2014
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Ching-Lin Chan, Yunlin County, TW;
Cheng-Chi Lin, Yilan County, TW;
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01); H01L 31/111 (2006.01); H01L 29/808 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/808 (2013.01); H01L 29/0843 (2013.01); H01L 29/1058 (2013.01); H01L 29/1095 (2013.01);
Abstract
A junction field effect transistor is disclosed. The junction field effect transistor includes a first doped region and a second doped region. The first doped region includes a source and a drain. The second doped region includes a gate. The first doped region and the second doped region have a U-shape PN junction there between. The U-shape PN junction is between the source and the drain.