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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9190373 B1

PDFFull Text
Date of Patent:
Nov. 17, 2015

Filed:

Aug. 31, 2011

Bump structure with underbump metallization structure and integrated redistribution layer

Applicants:

Tatsuo Migita, Oita, JP;

Hirokazu Ezawa, Tokyo, JP;

Soichi Yamashita, Kanagawa, JP;

Masaya Shima, Kanagawa, JP;

Inventors:

Tatsuo Migita, Oita, JP;

Hirokazu Ezawa, Tokyo, JP;

Soichi Yamashita, Kanagawa, JP;

Masaya Shima, Kanagawa, JP;

Assignee:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Ori Nadav

Assistant Examiner:

Ernest Allen, III

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); H01L 21/76885 (2013.01); H01L 23/293 (2013.01); H01L 23/3157 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 23/562 (2013.01); H01L 2224/0235 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05019 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05116 (2013.01); H01L 2224/05118 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05149 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05157 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05669 (2013.01); H01L 2224/05671 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13099 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/94 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/01025 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01);
Abstract

According to one embodiment, a semiconductor substrate, a redistribution trace, and a surface layer are provided, with the surface layer provided on the redistribution trace. On the semiconductor substrate, a wire and a pad electrode are formed. The redistribution trace is formed on the semiconductor substrate. The surface layer is larger in width than the redistribution trace, and extends beyond the edge of the redistribution trace.

Find Patent Forward Citations

Migita, Tatsuo. (2015). Bump structure with underbump metallization structure and integrated redistribution layer (U.S. Patent No. 9190373). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9190373

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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