The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2015

Filed:

Jul. 25, 2013
Applicant:

Tokyo Ohka Kogyo Co., Ltd., Kawasaki-shi, JP;

Inventors:

Takashi Kamizono, Kawasaki, JP;

Motoki Takahashi, Kawasaki, JP;

Toshiro Morita, Kawasaki, JP;

Assignee:

Tokyo Ohka Kogyo Co., Ltd., Kawasaki-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/22 (2006.01); H01L 31/18 (2006.01); H01L 31/0288 (2006.01); H01L 31/068 (2012.01); H01L 21/225 (2006.01);
U.S. Cl.
CPC ...
H01L 21/22 (2013.01); H01L 21/2225 (2013.01); H01L 21/2254 (2013.01); H01L 31/0288 (2013.01); H01L 31/0682 (2013.01); H01L 31/18 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01);
Abstract

A method of diffusing an impurity-diffusing component including forming a first diffusing agent layer containing a first conductivity type impurity-diffusing component on the surface of a semiconductor substrate; calcining the first diffusing agent layer; forming a second diffusing agent layer containing a second conductivity type impurity-diffusing component on the surface of the semiconductor substrate excluding the region where the first diffusing agent layer is formed; and heating the semiconductor substrate at a temperature higher than the calcination temperature to diffuse the first and second conductivity type impurity-diffusing components to the semiconductor substrate.


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