The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Nov. 10, 2011
Applicants:
Takayuki Kihara, Minato-ku, JP;
Kazushige Takaishi, Minato-ku, JP;
Yasuyuki Hashimoto, Minato-ku, JP;
Inventors:
Takayuki Kihara, Minato-ku, JP;
Kazushige Takaishi, Minato-ku, JP;
Yasuyuki Hashimoto, Minato-ku, JP;
Assignee:
SUMCO Corporation, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/06 (2006.01); H01L 21/02 (2006.01); B24B 7/22 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02381 (2013.01); B24B 7/228 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02658 (2013.01);
Abstract
Provided is an epitaxial silicon wafer in which the warping is reduced by rendering a cross-sectional form of a silicon wafer for epitaxial growth into an adequate form as compared with the conventional one. An epitaxial silicon wafer comprising a silicon wafer for epitaxial growth and an epitaxial layer is characterized in that the epitaxial layer is formed on a silicon wafer for epitaxial growth having a cross-sectional form satisfying a relation of a given expression.