The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9190194 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 17, 2015

Filed:

Apr. 19, 2013
Applicant:

Hitachi Metals, Ltd., Minato-ku, Tokyo, JP;

Inventors:

Takeshi Shimada, Osaka, JP;

Itaru Ueda, Osaka, JP;

Kentaro Ino, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01C 7/00 (2006.01); C04B 35/468 (2006.01); H01C 7/02 (2006.01); H01C 17/065 (2006.01); C04B 35/626 (2006.01); C04B 35/475 (2006.01); C04B 35/495 (2006.01); C04B 35/505 (2006.01); H01B 1/08 (2006.01);
U.S. Cl.
CPC ...
H01C 7/008 (2013.01); C04B 35/468 (2013.01); C04B 35/475 (2013.01); C04B 35/495 (2013.01); C04B 35/505 (2013.01); C04B 35/62675 (2013.01); H01B 1/08 (2013.01); H01C 7/025 (2013.01); H01C 17/06533 (2013.01); C04B 2235/02 (2013.01); C04B 2235/3201 (2013.01); C04B 2235/3203 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3251 (2013.01); C04B 2235/3294 (2013.01); C04B 2235/3298 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/65 (2013.01); C04B 2235/661 (2013.01); C04B 2235/75 (2013.01); C04B 2235/80 (2013.01);
Abstract

Provided is a semiconductor ceramic composition that is a lead-free semiconductor ceramic composition in which a portion of Ba in a BaTiO-based oxide is substituted by Bi and A (in which A is at least one kind of Na, Li and K), the semiconductor ceramic composition having a region between a center portion and an outer shell portion within a crystal grain, in which when Bi concentration is measured in a radial direction within the crystal grain, the Bi concentration in the region is higher than both Bi concentration in the center portion and Bi concentration in the outer shell portion.


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