The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2015

Filed:

Dec. 02, 2013
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

J. Wayne Thompson, Boise, ID (US);

Howard C. Kirsch, Eagle, ID (US);

Charles L. Ingalls, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 19/00 (2006.01); G11C 7/12 (2006.01); G11C 7/06 (2006.01); G11C 11/4091 (2006.01); G11C 11/4094 (2006.01);
U.S. Cl.
CPC ...
G11C 7/12 (2013.01); G11C 7/06 (2013.01); G11C 7/065 (2013.01); G11C 11/4091 (2013.01); G11C 11/4094 (2013.01);
Abstract

Sense amplifiers and methods for precharging are disclosed, including a sense amplifier having a pair of cross-coupled complementary transistor inverters, and a pair of transistors, each one of the pair of transistors coupled to a respective one of the complementary transistor inverters and a voltage. The sense amplifier further includes a capacitance coupled between the pair of transistors. One method for precharging includes coupling input nodes of the sense amplifier to a precharge voltage, coupling the input nodes of the sense amplifier together, and coupling a resistance to each transistor of a cross-coupled pair to set a voltage threshold (VT) mismatch compensation voltage for each transistor. The voltage difference between the VT mismatch compensation voltage of each transistor is stored.


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