The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2015

Filed:

Dec. 29, 2011
Applicants:

Blaise Fanning, Folsom, CA (US);

Shekoufeh Qawami, El Dorado Hills, CA (US);

Raymond S. Tetrick, Portland, OR (US);

Frank T. Hady, Portland, OR (US);

Inventors:

Blaise Fanning, Folsom, CA (US);

Shekoufeh Qawami, El Dorado Hills, CA (US);

Raymond S. Tetrick, Portland, OR (US);

Frank T. Hady, Portland, OR (US);

Assignee:

INTEL CORPORATION, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G11C 7/10 (2006.01); G06F 12/02 (2006.01); G06F 12/10 (2006.01); G11C 16/00 (2006.01); G06F 12/08 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 7/1006 (2013.01); G06F 12/023 (2013.01); G06F 12/0238 (2013.01); G06F 12/08 (2013.01); G06F 12/10 (2013.01); G11C 16/00 (2013.01); G06F 2212/205 (2013.01); G06F 2212/2024 (2013.01); G06F 2212/7201 (2013.01); G06F 2212/7204 (2013.01); G11C 11/56 (2013.01); Y02B 60/1225 (2013.01);
Abstract

Embodiments of a method, device, and system for implementing multi-level memory with direct access are disclosed. In one embodiment, the method includes designating an amount of a non-volatile random access memory (NVRAM) in a computer system to be utilized as a memory alternative for a dynamic random access memory (DRAM). The method continues by designating a second amount of the NVRAM to be utilized as a storage alternative for a mass storage device. Then the method re-designates at least a first portion of the first amount of NVRAM from the memory alternative designation to the storage alternative designation during operation of the computer system. Finally, the method re-designates at least a first portion of the second amount of NVRAM from the storage alternative designation to the memory alternative designation during operation of the computer system.


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