The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Feb. 25, 2014
Applicants:
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 29/66818 (2013.01);
Abstract
A method for manufacturing a fin for a FinFET device includes providing a semiconductor substrate, forming a plurality of implanted regions in the semiconductor substrate, and epitaxially forming fins between two adjacent implanted regions. The method also includes forming an insulating structure between two adjacent fins.
Yu, Guobin. (2015). Finfet device and method of forming fin in the same (U.S. Patent No. 9184291). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9184291
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile