The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Sep. 09, 2014
Applicant:
Hitachi Metals, Ltd., Tokyo, JP;
Inventor:
Naoki Kaneda, Tsuchiura, JP;
Assignee:
Sciocs Company Limited, Ibaraki-ken, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/207 (2006.01); H01L 29/20 (2006.01); H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0254 (2013.01); H01L 29/1095 (2013.01); H01L 21/02389 (2013.01); H01L 29/207 (2013.01); H01L 29/66204 (2013.01);
Abstract
A high voltage gallium nitride based semiconductor device includes an n-type gallium nitride freestanding substrate, and an n-type gallium nitride based semiconductor layer including a drift layer formed on the surface of the n-type gallium nitride freestanding substrate so as to have a reverse breakdown voltage of not less than 3000 V. The drift layer is configured such that a carbon concentration is not less than 3.0×10/cmin a region which has an electric field intensity of not more than 1.5 MV/cm when a maximum allowable voltage where there occurs no breakdown phenomenon is applied as a reverse bias voltage.