logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9184230 B1

PDFFull Text
Date of Patent:
Nov. 10, 2015

Filed:

Apr. 06, 2012

Silicon carbide vertical field effect transistor

Applicants:

Yuichi Harada, Tsukuba, JP;

Shinsuke Harada, Tsukuba, JP;

Yasuyuki Hoshi, Tsukuba, JP;

Noriyuki Iwamuro, Tsukuba, JP;

Inventors:

Yuichi Harada, Tsukuba, JP;

Shinsuke Harada, Tsukuba, JP;

Yasuyuki Hoshi, Tsukuba, JP;

Noriyuki Iwamuro, Tsukuba, JP;

Assignees:

FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;

NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo, JP;

Attorney:

Westerman, Hattori, Daniels & Adrian, LLP

Primary Examiner:

Brook Kebede

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0615 (2013.01); H01L 29/0626 (2013.01); H01L 29/1095 (2013.01); H01L 29/7802 (2013.01); H01L 29/7808 (2013.01); H01L 29/7827 (2013.01); H01L 29/0878 (2013.01); H01L 29/1608 (2013.01);
Abstract

A silicon carbide vertical field effect transistor includes a first-conductive-type silicon carbide substrate; a low-concentration first-conductive-type silicon carbide layer formed on a surface of the first-conductive-type silicon carbide substrate; second-conductive-type regions selectively formed on a surface of the first-conductive-type silicon carbide layer; first-conductive-type source regions formed in the second-conductive-type regions; a high-concentration second-conductive-type region formed between the first-conductive-type source regions in the second-conductive-type region; a source electrode electrically connected to the high-concentration second-conductive-type region and a first-conductive-type source region; a gate insulating film formed from the first-conductive-type source regions formed in adjacent second-conductive-type regions, onto the second-conductive-type regions and the first-conductive-type silicon carbide layer; a gate electrode formed on the gate insulating film; and a drain electrode on the back side of the first-conductive-type silicon carbide substrate, wherein an avalanche generating unit is disposed between the second-conductive-type region and the first-conductive-type silicon carbide layer.

Find Patent Forward Citations

Harada, Yuichi. (2015). Silicon carbide vertical field effect transistor (U.S. Patent No. 9184230). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9184230

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…