The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

Oct. 24, 2011
Applicants:

Kenichi Sato, Hamamatsu, JP;

Kazuhisa Yamamura, Hamamatsu, JP;

Shinji Ohsuka, Hamamatsu, JP;

Inventors:

Kenichi Sato, Hamamatsu, JP;

Kazuhisa Yamamura, Hamamatsu, JP;

Shinji Ohsuka, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 27/144 (2006.01); H01L 27/146 (2006.01); H01L 31/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1446 (2013.01); H01L 27/146 (2013.01); H01L 31/02027 (2013.01); H01L 27/14643 (2013.01);
Abstract

This photodiode arrayincludes quenching resistorswhich are connected in series to respective avalanche photodiodes APDs, a peripheral wiring WL which surrounds a region in which the plurality of avalanche photodiodes APDs are formed, and a plurality of relay wiringswhich are electrically connected to the peripheral wiring WL, so as to respectively connect at least two places of the peripheral wiring WL. One of an anode and a cathode of each avalanche photodiode APD is electrically connected to any one of the relay wiringsvia the quenching resistor, and the other of the anode and the cathode of each avalanche photodiode APD is electrically connected to another electrodeprovided on a semiconductor substrate.


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