The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

Dec. 23, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Tai-Su Park, Seoul, KR;

Mi-Young Seo, Hwaseong-si, KR;

Sung-Wook Park, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01);
Abstract

Methods of fabricating a semiconductor device include forming a field trench in a silicon substrate, forming a first oxide layer in the field trench, forming a first thinned oxide layer by partially removing a surface of the first oxide layer, and forming a first nitride layer on the first thinned oxide layer.


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