The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Apr. 29, 2015
Applicant:
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Inventors:
Takayuki Koyama, Toyota, JP;
Takanori Yamamoto, Nagakute, JP;
Kenji Nakashima, Nagakute, JP;
Takahiro Kozawa, Nagakute, JP;
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); H01L 21/02 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02271 (2013.01); H01L 21/31116 (2013.01); H01L 29/0634 (2013.01); H01L 29/4236 (2013.01);
Abstract
A method for manufacturing a semiconductor device is provided with filling a trench by supplying trichlorosilane gas to a substrate where the trench is formed. A relation between a gas concentration of trichlorosilane gas and a film formation speed includes a concentration countergradient condition in which the film formation speed decreases as the gas concentration increases. The filling of the trench is performed under the concentration countergradient condition.