The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Apr. 28, 2014
Applicant:
National Tsing Hua University, Hsinchu, TW;
Inventors:
Wan-Chen Chen, Hsinchu, TW;
Wei-Jen Hsu, Hsinchu, TW;
Po-Yuan Teng, Hsinchu, TW;
Po-Wen Chiu, Hsinchu, TW;
Assignee:
NATIONAL TSING HUA UNIVERSITY, Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 13/00 (2006.01); H01B 13/34 (2006.01); H01B 1/04 (2006.01);
U.S. Cl.
CPC ...
H01B 13/348 (2013.01); H01B 1/04 (2013.01); H01B 13/0016 (2013.01);
Abstract
A method for controllable layer-by-layer removal of graphene layers is provided. The method includes the steps of: disposing a single-layer or multi-layer graphene on a heat source, arranging graphene layer or layers in a sealed chamber filled with ozone gas, and removing a targeted area of graphene with a laser. The method provides low-temperature removal of graphene layer-by-layer. The heat source, laser, and the highly oxidizing ozone gas selectively control the removal of graphene layers.