The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

Jun. 13, 2014
Applicant:

Western Digital (Fremont), Llc, Fremont, CA (US);

Inventors:

Dujiang Wan, Fremont, CA (US);

Ge Yi, San Ramon, CA (US);

Lijie Zhao, Pleasanton, CA (US);

Hai Sun, Milpitas, CA (US);

Yunfei Li, Fremont, CA (US);

Assignee:

Western Digital (Fremont), LLC, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/31 (2006.01); G02B 6/122 (2006.01); G02B 6/10 (2006.01); G02B 6/136 (2006.01);
U.S. Cl.
CPC ...
G11B 5/314 (2013.01); G02B 6/10 (2013.01); G02B 6/122 (2013.01); G02B 6/136 (2013.01);
Abstract

A method for making an interferometric taper waveguide (I-TWG) with high critical dimension uniformity and small line edge roughness for a heat assisted magnetic recording (HAMR) head, wherein the method includes creating an I-TWG film stack with two hard mask layers on top of an I-TWG core layer sandwiched between two cladding layers, defining a photoresist pattern over the I-TWG film stack using deep ultraviolet lithography, transferring the pattern to the first hard mask layer using reactive ion etching (RIE), forming a temporary I-TWG pattern on the second hard mask layer using RIE, transferring the temporary pattern to the I-TWG core using RIE, refilling the cladding layer, and planarizing using chemical mechanical planarization (CMP).


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