The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Jul. 31, 2009
Atsuo Isobe, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Koji Dairiki, Tochigi, JP;
Hiroshi Shibata, Higashine, JP;
Chiho Kokubo, Tochigi, JP;
Tatsuya Arao, Atsugi, JP;
Masahiko Hayakawa, Atsugi, JP;
Hidekazu Miyairi, Atsugi, JP;
Akihisa Shimomura, Atsugi, JP;
Koichiro Tanaka, Atsugi, JP;
Mai Akiba, Isehara, JP;
Atsuo Isobe, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Koji Dairiki, Tochigi, JP;
Hiroshi Shibata, Higashine, JP;
Chiho Kokubo, Tochigi, JP;
Tatsuya Arao, Atsugi, JP;
Masahiko Hayakawa, Atsugi, JP;
Hidekazu Miyairi, Atsugi, JP;
Akihisa Shimomura, Atsugi, JP;
Koichiro Tanaka, Atsugi, JP;
Mai Akiba, Isehara, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.