The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Aug. 12, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wei-Yuan Lu, Taipei, TW;
Li-Ping Huang, Taipei, TW;
Han-Ting Tsai, Kaohsiung, TW;
Wei-Ching Wang, Taichung, TW;
Ming-Shuan Li, Shudong Township, TW;
Hsueh-Jen Yang, Taipei, TW;
Kuan-Chung Chen, Taipei, TW;
Abstract
A semiconductor device includes a gate structure over a substrate, a source region in the substrate, where the source region is adjacent to the gate structure. Additionally, the semiconductor device includes a drain region in the substrate, where the drain region is adjacent to the gate structure. Moreover, the semiconductor device includes a first dislocation in the substrate between the source region and the drain region. Furthermore, the semiconductor device includes a second dislocation in the substrate between the source region and the drain region, where the second dislocation is substantially parallel to the first dislocation.