The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Nov. 07, 2013
Tokyo Electron Limited, Tokyo, JP;
Yuta Seya, Miyagi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A plasma etching method includes etching an amorphous carbon film by a plasma of an oxygen-containing gas using, as a mask, an SiON film having a predetermined pattern formed on a target object, etching a silicon oxide film by a plasma of a processing gas using the amorphous carbon film as a mask while removing the SiON film remaining on the etched amorphous carbon film by the plasma of the processing gas. The plasma etching method further includes modifying the amorphous carbon film by a plasma of a sulfur-containing gas or a hydrogen-containing gas while applying a negative DC voltage to an upper electrode containing silicon after the SiON film is removed from the amorphous carbon film, and etching the silicon oxide film again by the plasma of the processing gas using the modified amorphous carbon film as a mask.