The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2015

Filed:

Feb. 04, 2014
Applicant:

Xilinx, Inc., San Jose, CA (US);

Inventors:

Steven P. Young, Boulder, CO (US);

Yang Song, Milpitas, CA (US);

Nui Chong, Cupertino, CA (US);

Assignee:

XILINX, INC., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); G11C 11/412 (2006.01); G11C 11/41 (2006.01); H03K 19/177 (2006.01);
U.S. Cl.
CPC ...
G11C 11/41 (2013.01); H03K 19/177 (2013.01); H01L 27/1104 (2013.01);
Abstract

A memory cell includes a first inverter and a second inverter, wherein the first inverter and second inverter are cross-coupled using a storage node and an inverse storage node; a data node and an inverse data node, wherein the data node and inverse data node are next to a first side of the memory cell; and an address line controlling access to the storage node and the inverse storage node by the data and inverse data nodes; wherein the memory cell comprises a two gate pitch memory cell.


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